"Eleventh Edition of bestselling Mechanics of Materials textbook containing new examples, new problems, and new design"-- Provided by publisher.

• 1. Stress Chapter Objectives 1.1 Introduction 1.2 Equilibrium of a Deformable Body 1.3 Stress 1.4 Average Normal Stress in an Axially Loaded Bar 1.5 Average Shear Stress 1.6 Allowable Stress Design 1.7 Limit State Design
• 2. Strain Chapter Objectives 2.1 Deformation 2.2 Strain
• 3. Mechanical Properties of Materials Chapter Objectives 3.1 The Tension and Compression Test 3.2 The Stress-Strain Diagram 3.3 Stress-Strain Behavior of Ductile and Brittle Materials 3.4 Strain Energy 3.5 Poisson's Ratio 3.6 The Shear Stress-Strain Diagram *3.7 Failure of Materials Due to Creep and Fatigue
• 4. Axial Load Chapter Objectives 4.1 Saint-Venant's Principle 4.2 Elastic Deformation of an Axially Loaded Member 4.3 Principle of Superposition 4.4 Statically Indeterminate Axially Loaded Members 4.5 The Force Method of Analysis for Axially Loaded Members 4.6 Thermal Stress 4.7 Stress Concentrations *4.8 Inelastic Axial Deformation *4.9 Residual Stress
• 5. Torsion Chapter Objectives 5.1 Torsional Deformation of a Circular Shaft 5.2 The Torsion Formula 5.3 Power Transmission 5.4 Angle of Twist 5.5 Statically Indeterminate Torque-Loaded Members *5.6 Solid Noncircular Shafts *5.7 Thin-Walled Tubes Having Closed Cross Sections 5.8 Stress Concentration *5.9 Inelastic Torsion *5.10 Residual Stress
• 6. Bending Chapter Objectives 6.1 Shear and Moment Diagrams 6.2 Graphical Method for Constructing Shear and Moment Diagrams 6.3 Bending Deformation of a Straight Member 6.4 The Flexure Formula 6.5 Unsymmetric Bending *6.6 Composite Beams *6.7 Reinforced Concrete Beams *6.8 Curved Beams 6.9 Stress Concentrations *6.10 Inelastic Bending
• 7. Transverse Shear Chapter Objectives 7.1 Shear in Straight Members 7.2 The Shear Formula 7.3 Shear Flow in Built-Up Members 7.4 Shear Flow in Thin-Walled Members *7.5 Shear Center for Open Thin-Walled Members
• 8. Combined Loadings Chapter Objectives 8.1 Thin-Walled Pressure Vessels 8.2 State of Stress Caused by Combined Loadings
• 9. Stress Transformation Chapter Objectives 9.1 Plane-Stress Transformation 9.2 General Equations of Plane-Stress Transformation 9.3 Principal Stresses and Maximum In-Plane Shear Stress 9.4 Mohr's Circle-Plane Stress 9.5 Absolute Maximum Shear Stress
• 10. Strain Transformation Chapter Objectives 10.1 Plane Strain 10.2 General Equations of Plane-Strain Transformation *10.3 Mohr's Circle-Plane Strain *10.4 Absolute Maximum Shear Strain 10.5 Strain Rosettes 10.6 Material Property Relationships *10.7 Theories of Failure
• 11. Design of Beams and Shafts Chapter Objectives 11.1 Basis for Beam Design 11.2 Prismatic Beam Design *11.3 Fully Stressed Beams *11.4 Shaft Design
• 12. Deflection of Beams and Shafts Chapter Objectives 12.1 The Elastic Curve 12.2 Slope and Displacement by Integration *12.3 Discontinuity Functions *12.4 Slope and Displacement by the Moment-Area Method 12.5 Method of Superposition 12.6 Statically Indeterminate Beams and Shafts 12.7 Statically Indeterminate Beams and Shafts-Method of Integration *12.8 Statically Indeterminate Beams and Shafts-Moment-Area Method 12.9 Statically Indeterminate Beams and Shafts-Method of Superposition
• 13. Buckling of Columns Chapter Objectives 13.1 Critical Load 13.2 Ideal Column with Pin Supports 13.3 Columns Having Various Types of Supports *13.4 The Secant Formula *13.5 Inelastic Buckling *13.6 Design of Columns for Concentric Loading *13.7 Design of Columns for Eccentric Loading
• 14. Energy Methods Chapter Objectives 14.1 External Work and Strain Energy 14.2 Elastic Strain Energy for Various Types of Loading 14.3 Conservation of Energy 14.4 Impact Loading *14.5 Principle of Virtual Work *14.6 Method of Virtual Forces Applied to Trusses *14.7 Method of Virtual Forces Applied to Beams *14.8 Castigliano's Theorem *14.9 Castigliano's Theorem Applied to Trusses *14.10 Castigliano's Theorem Applied to Beams
• Appendix A Geometric Properties of an Area B Geometric Properties of Structural Shapes C Slopes and Deflections of Beams
• Solutions and Answers for Preliminary Problems Fundamental Problems Partial Solutions and Answers Selected Answers Index
• Sections of the book that contain more advanced material are indicated by a star (*).
• (source: Nielsen Book Data)

For undergraduate Mechanics of Materials courses in Mechanical, Civil, and Aerospace Engineering departments. Thorough coverage, a highly visual presentation, and increased problem solving from an author you trust. Mechanics of Materials clearly and thoroughly presents the theory and supports the application of essential mechanics of materials principles. Professor Hibbeler's concise writing style, countless examples, and stunning four-color photorealistic art program - all shaped by the comments and suggestions of hundreds of reviewers - help readers visualize and master difficult concepts. The Tenth Edition retains the hallmark features synonymous with the Hibbeler franchise, but has been enhanced with the most current information, a fresh new layout, added problem solving, and increased flexibility in the way topics are covered. Also available with MasteringEngineering(TM). This title is also available with MasteringEngineering, an online homework, tutorial, and assessment program designed to work with this text to engage students and improve results. Interactive, self-paced tutorials provide individualized coaching to help students stay on track. With a wide range of activities available, students can actively learn, understand, and retain even the most difficult concepts. The text and MasteringEngineering work together to guide students through engineering concepts with a multi-step approach to problems. Note: You are purchasing a standalone product; MyLab(TM) & Mastering(TM) does not come packaged with this content. Students, if interested in purchasing this title with MyLab & Mastering, ask your instructor for the correct package ISBN and Course ID. Instructors, contact your Pearson representative for more information. If you would like to purchase both the physical text and MyLab & Mastering, search for: 0134518128 / 9780134518121 Mechanics of Materials Plus MasteringEngineering with Pearson eText -- Access Card Package, 10/e Package consists of: *0134319656 / 9780134319650 Mechanics of Materials, 10/e *0134321286 / 9780134321288 MasteringEngineering with Pearson eText--Standalone Access Card--for Mechanics of Materials.
(source: Nielsen Book Data)

• Unit I. Introduction to the Study of Modern Chemistry.
• 1. The Atom in Modern Chemistry.
• 2. Chemical Formulas, Equations, and Reaction Yields. Unit II. Chemical Bonding and Molecular Structure.
• 3. Atomic Shells and Classical Models of Chemical Bonding.
• 4. Introduction to Quantum Mechanics.
• 5. Quantum Mechanics and Atomic Structure.
• 6. Quantum Mechanics and Molecular Structure.
• 7. Bonding in Organic Molecules.
• 8. Bonding in Transition Metal Compounds and Coordination Complexes. Unit III. Kinetic Molecular Description of the States of Matter.
• 9. The Gaseous State.
• 10. Solids, Liquids, and Phase Transitions.
• 11. Solutions. Unit IV. Equilibrium in Chemical Reactions.
• 12. Thermodynamic Processes and Thermochemistry.
• 13. Spontaneous Processes and Thermodynamic Equilibrium.
• 14. Chemical Equilibrium.
• 15. Acid-Base Equilibria.
• 16. Solubility and Precipitation Equilibria.
• 17. Electrochemistry. Unit V. Rates of Chemical and Physical Processes.
• 18. Chemical Kinetics.
• 19. Nuclear Chemistry.
• 20. Molecular Spectroscopy and Photochemistry. Unit VI. Materials.
• 21. Structure and Bonding in Solids.
• 22. Inorganic Materials.
• 23. Polymeric Materials and Soft Condensed Matter. Appendix A. Scientific Notation and Experimental Error. Appendix B. SI Units, Unit Conversions, and Physics for General Chemistry. Appendix C. Mathematics for General Chemistry. Appendix D. Standard Chemical Thermodynamic Properties. Appendix E. Standard Reaction Potentials at 25 DegreesC. Appendix F. Physical Properties of the Elements. Appendix G. Solutions to the Odd-Numbered Problems. Index/Glossary.
• (source: Nielsen Book Data)

Long considered the standard for covering chemistry at a high level, PRINCIPLES OF MODERN CHEMISTRY continues to set the standard as the most modern, rigorous, and chemically and mathematically accurate book on the market. This authoritative text features an "atoms first" approach and thoroughly revised chapters on Quantum Mechanics and Molecular Structure (Chapter 6), Electrochemistry (Chapter 17), and Molecular Spectroscopy and Photochemistry (Chapter 20). In addition, the text utilizes mathematically accurate and artistic atomic and molecular orbital art, and is student friendly without compromising its rigor. End-of-chapter learning aids now focus on only the most important key objectives, equations and concepts, making it easier for readers to locate chapter content, while new applications to a wide range of disciplines, such as biology, chemical engineering, biochemistry, and medicine deepen readers' understanding of the relevance of chemistry in today's world.
(source: Nielsen Book Data)

Neuroscience is, by definition, a multidisciplinary field: some scientists study genes and proteins at the molecular level while others study neural circuitry using electrophysiology and high-resolution optics. A single topic can be studied using techniques from genetics, imaging, biochemistry, or electrophysiology. Therefore, it can be daunting for young scientists or anyone new to neuroscience to learn how to read the primary literature and develop their own experiments. This volume addresses that gap, gathering multidisciplinary knowledge and providing tools for understanding the neuroscience techniques that are essential to the field, and allowing the reader to design experiments in a variety of neuroscience disciplines. * Written to provide a "hands-on" approach for graduate students, postdocs, or anyone new to the neurosciences* Techniques within one field are compared, allowing readers to select the best techniques for their own work* Includes key articles, books, and protocols for additional detailed study* Data analysis boxes in each chapter help with data interpretation and offer guidelines on how best to represent results* Walk-through boxes guide readers step-by-step through experiments.
(source: Nielsen Book Data)

• Crystal properties and growth of semiconductors
• Atoms and electrons
• Energy bands and charge carriers in semiconductors
• Excess carriers in semiconductors
• Junctions Fiald-effect transistors
• Bipolar junction transistors
• Optoelectronc devices
• Integrated circuits
• High-frequency, high-power and nanoelectronic devices

Solid State Electronic Devices is intended for undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics ? One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications. ?? Teaching and Learning Experience This program will provide a better teaching and learning experience-for you and your students. It will help: Provide a Sound Understanding of Current Semiconductor Devices: With this background, students will be able to see how their applications to electronic and optoelectronic circuits and systems are meaningful. Incorporate the Basics of Semiconductor Materials and Conduction Processes in Solids: Most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices. Develop Basic Semiconductor Physics Concepts: With this background, students will be better able to understand current and future devices.
(source: Nielsen Book Data)

• Introduction
• Overview of the nervous system: structures and functions
• The structure of nerve cells and their supporting tissues
• Electrical transmission in the nervous system
• Chemical transmission and the mechanism of drug action
• Sensation
• Vision and the eye
• Vision: central mechanisms
• Audition
• Somesthesis and vestibular sense
• Chemical, heat, and electrical senses
• Reflexes
• Brain control of movement
• Learning and memory
• Motivation
• Language and the brain
• Neurological disease
• Personality and emotion
• Mental illness and the history of surgical and drug treatment
• Consciousness and the techniques for study of the human brain
• Conclusion.

An introduction to the structure and function of the nervous system that emphasizes the history of experiments and observations that led to modern neuroscientific knowledge. This introduction to neuroscience is unique in its emphasis on how we know what we know about the structure and function of the nervous system. What are the observations and experiments that have taught us about the brain and spinal cord? The book traces our current neuroscientific knowledge to many and varied sources, including ancient observations on the role of the spinal cord in posture and movement, nineteenth-century neuroanatomists' descriptions of the nature of nerve cells, physicians' attempts throughout history to correlate the site of a brain injury with its symptoms, and experiments on the brains of invertebrates. After an overview of the brain and its connections to the sensory and motor systems, Neuroscience discusses, among other topics, the structure of nerve cells; electrical transmission in the nervous system; chemical transmission and the mechanism of drug action; sensation; vision; hearing; movement; learning and memory; language and the brain; neurological disease; personality and emotion; the treatment of mental illness; and consciousness. It explains the sometimes baffling Latin names for brain subdivisions; discusses the role of technology in the field, from microscopes to EEGs; and describes the many varieties of scientific discovery. The book's novel perspective offers a particularly effective way for students to learn about neuroscience. It also makes it clear that past contributions offer a valuable guide for thinking about the puzzles that remain.
(source: Nielsen Book Data)

• 1. Electrostatics: charges and fields
• 2. The electric potential
• 3. Electric fields around conductors
• 4. Electric currents
• 5. The fields of moving charges
• 6. The magnetic field
• 7. Electromagnetic induction
• 8. Alternating-current circuits
• 9. Maxwell's equations and electromagnetic waves
• 10. Electric fields in matter
• 11. Magnetic fields in matter
• Appendixes
• References
• Index.
• (source: Nielsen Book Data)

For 50 years, Edward M. Purcell's classic textbook has introduced students to the world of electricity and magnetism. The third edition has been brought up to date and is now in SI units. It features hundreds of new examples, problems, and figures, and contains discussions of real-life applications. The textbook covers all the standard introductory topics, such as electrostatics, magnetism, circuits, electromagnetic waves, and electric and magnetic fields in matter. Taking a nontraditional approach, magnetism is derived as a relativistic effect. Mathematical concepts are introduced in parallel with the physics topics at hand, making the motivations clear. Macroscopic phenomena are derived rigorously from the underlying microscopic physics. With worked examples, hundreds of illustrations, and nearly 600 end-of-chapter problems and exercises, this textbook is ideal for electricity and magnetism courses. Solutions to the exercises are available for instructors at www.cambridge.org/Purcell-Morin.
(source: Nielsen Book Data)

• 1 CRYSTAL PROPERTIES AND GROWTH OF SEMICONDUCTORS. Semiconductor Materials. Periodic Structures. Crystal Lattices. Cubic Lattices. Planes and Directions. The Diamond Lattice. Bulk Crystal Growth. Starting Materials. Growth of Single Crystal Ingots. Wafers. Doping. Epitaxial Growth. Lattice Matching in Epitaxial Growth. Vapor-Phase Epitaxy. Molecular Beam Epitaxy. 2 ATOMS AND ELECTRONS. Introduction to Physical Models. Experimental Observations. The Photoelectric Effect. Atomic Spectra. The Bohr Model. Quantum Mechanics. Probability and the Uncertainty Principle. The Schrdinger Wave Equation. Potential Well Problem. Tunneling. Atomic Structure and the Periodic Table. The Hydrogen Atom. The Periodic Table. 3 ENERGY BANDS AND CHARGE CARRIERS IN SEMICONDUCTORS. Bonding Forces and Energy Bands in Solids. Bonding Forces in Solids. Energy Bands. Metals, Semiconductors, and Insulators. Direct and Indirect Semiconductors. Variation of Energy Bands with Alloy Composition. Charge Carriers in Semiconductors. Electrons and Holes. Effective Mass. Intrinsic Material. Extrinsic Material. Electrons and Holes in Quantum Wells. Carrier Concentrations. The Fermi Level. Electron and Hole Concentrations at Equilibrium. Temperature Dependence of Carrier Concentrations. Compensation and Space Charge Neutrality. Drift of Carriers in Electric and Magnetic Fields. Conductivity and Mobility. Drift and Resistance. EFFECTS OF TEMPERATURE AND DOPING ON MOBILITY. High-Field Effects. The Hall Effect. Invariance of the Fermi Level at Equilibrium. 4 EXCESS CARRIERS IN SEMICONDUCTORS. Optical Absorption. Luminescence. Photoluminescence. Electroluminescence. Carrier Lifetime and Photoconductivity. Direct Recombination of Electrons and Holes. Indirect Recombination
• Trapping. Steady State Carrier Generation
• Quasi-Fermi Levels. Photoconductive Devices. Diffusion of Carriers. Diffusion Processes. Diffusion and Drift of Carriers
• Built-in Fields. Diffusion and Recombination
• The Continuity Equation. Steady State Carrier Injection
• Diffusion Length. The Haynes-Shockley Experiment. Gradients in the Quasi-Fermi Levels. 5 JUNCTIONS. Fabrication of p-n Junctions. Thermal Oxidation. Diffusion. Rapid Thermal Processing. Ion Implantation. Chemical Vapor Deposition (CVD). Photolithography. Etching. Metallization. Equilibrium Conditions. The Contact Potential. Equilibrium Fermi Levels. Space Charge at a Junction. Forward- and Reverse-Biased Junctions
• Steady State Conditions. Qualitative Description of Current Flow at a Junction. Carrier Injection. Reverse Bias. Reverse-Bias Breakdown. Zener Breakdown. Avalanche Breakdown. Rectifiers. The Breakdown Diode. Transient and A-C Conditions. Time Variation of Stored Charge. Reverse Recovery Transient. Switching Diodes. Capacitance of p-n Junctions. The Varactor Diode. Deviations from the Simple Theory. Effects of Contact Potential on Carrier Injection. Recombination and Generation in the Transition Region. Ohmic Losses. GRADED JUNCTIONS. Metal-Semiconductor Junctions. Schottky Barriers. Rectifying Contacts. Ohmic Contacts. Typical Schottky Barriers. Heterojunctions. 6 FIELD-EFFECT TRANSISTORS. Transistor Operation. The Load Line. Amplification and Switching. The Junction FET. Pinch-off and Saturation. Gate Control. Current-Voltage Characteristics. The Metal-Semiconductor FET. The GaAs MESFET. The High Electron Mobility Transistor (HEMT). Short Channel Effects. The Metal-Insulator-Semiconductor FET. Basic Operation and Fabrication. The Ideal MOS Capacitor. Effects of Real Surfaces. Threshold Voltage. MOS Capacitance-Voltage Analysis. Time-dependent Capacitance Measurements. Current-Voltage Characteristics of MOS Gate Oxides. The MOS Field-Effect Transistor. Output Characteristics. Transfer Characteristics. Mobility Models. Short Channel MOSFET I-V Characteristics. Control of Threshold Voltage. Substrate Bias Effects. Subthreshold Characteristics. Equivalent Circuit for the MOSFET. MOSFET Scaling and Hot Electron Effects. Drain-Induced Barrier Lowering. Short Channel and Narrow Width Effect. Gate-Induced Drain Leakage. 7 BIPOLAR JUNCTION TRANSISTORS. Fundamentals of BJT Operation. Amplification with BJTs. BJT Fabrication. Minority Carrier Distributions and Terminal Currents. Solution of the Diffusion Equation in the Base Region. Evaluation of the Terminal Currents. Approximations of the Terminal Currents. Current Transfer Ratio. Generalized Biasing. The Coupled-Diode Model. Charge Control Analysis. Switching. Cutoff. Saturation. The Switching Cycle. Specifications for Switching Transistors. Other Important Effects. Drift in the Base Region. Base Narrowing. Avalanche Breakdown. Injection Level
• Thermal Effects. Base Resistance and Emitter Crowding. Gummel-Poon Model. Kirk Effect. Frequency Limitations of Transistors. Capacitance and Charging Times. Transit Time Effects. Webster Effect. High-Frequency Transistors. Heterojunction Bipolar Transistors. 8 OPTOELECTRONIC DEVICES. Photodiodes. Current and Voltage in an Illuminated Junction. Solar Cells. Photodetectors. Noise and Bandwidth of Photodetectors. Light-Emitting Diodes. Light-Emitting Materials. Fiber Optic Communications. Multilayer Heterojunctions for LEDs. Lasers. Semiconductor Lasers. Population Inversion at a Junction. Emission Spectra for p-n Junction Lasers. The Basic Semiconductor Laser. Heterojunction Lasers. Materials for Semiconductor Lasers. 9 INTEGRATED CIRCUITS. Background. Advantages of Integration. Types of Integrated Circuits. Monolithic and Hybrid Circuits. Evolution of Integrated Circuits. Monolithic Device Elements. CMOS Process Integration. Silicon-on-Insulator (SOI). Integration of Other Circuit Elements. Charge Transfer Devices. Dynamic Effects in MOS Capacitors. The Basic CCD. Improvements on the Basic Structure. Applications of CCDs. Ultra Large-Scale Integration (ULSI). Logic Devices. Semiconductor Memories. Testing, Bonding, and Packaging. Testing. Wire Bonding. Flip-Chip Techniques. Packaging. 10. HIGH FREQUENCY AND HIGH POWER DEVICES. Tunnel Diodes: Degenerate Semiconductors. Tunnel diode Operation. Circuit Applications. Transit Time Devices: The IMPATT Diode. Gunn Effect and Related Devices: Transferred Electron Mechanism. Formation and Drift of Space Charge Domains. Fabrication. The p-n-p-n Diode: Basic Structure. Two-Transistor Analogy. Variation of a with Injection. Forward-Blocking State. Conducting State. Triggering Mechanisms. Semiconductor Controlled Rectifier: Gate Control. Turning off the SCR. Bilateral Devices. Fabrication and Applications. Insulated Gate Bipolar Transistor. APPENDICES. Definitions of Commonly Used Symbols. Physical Constants and Conversion Factors. Properties of Semiconductor Materials. Derivation of the Density of States in the Conduction Band. Derivation of Fermi-Dirac Statistics. Dry and Wet Thermal Oxide Thickness as a Function of Time and Temperature. Solid Solubilities of Impurities in Si. Diffusivities of Dopants in Si and SiO2. Projected Range and Straggle as a Function of Implant Energy in Si. INDEX.
• (source: Nielsen Book Data)

For undergraduate electrical engineering students or for practicing engineers and scientists, interested in updating their understanding of modern electronics. One of the most widely used introductory books on semiconductor materials, physics, devices and technology, this text aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications.
(source: Nielsen Book Data)

• Contents. Preface. Acknowledgments. Contributors. Part I: The Neurology of Behavior. Part II: Cell and Molecular Biology of the Neuron. Part III: Elementary Interactions Between Neurons: Synaptic Transmission. Part IV: The Neural Basis of Cognition. Part Part V: Perception. Part VI: Movement. Part VII: Arousal, Emotion, and Behavior Homeostasis. Part VIII: The Development of the Nervous System. Part IX: Language, Thought, Mood, and Learning and Memory. Appendices. Index.
• (source: Nielsen Book Data)

This is the most authoritative introduction to the brain, its structure, function, development, and control of behavior available today. It presents both a comprehensive summary of the state of the science and a full discussion of historical issues in the study of the brain. Neuroanatomy, cell and molecular mechanisms, mechanisms of signaling, and development are thoroughly described in the context of the cognitive approaches to behavior. Thoroughly revised, with a new full-color art program, this text was re-designed to be more user friendly. Also featured is an expanded treatment of the development of the nervous system, the genetic basis of neurological and psychiatric diseases, the cognitive neuroscience of perception, and ion channel mechanisms.
(source: Nielsen Book Data)

• (NOTE: Chapters 3-11 include an Introduction, Historical Development and Basic Concepts, Manufacturing Methods and Equipment, Measurement Methods, Models and Simulation, Limits and Future Trends in Technologies and Models, Summary of Key Ideas, References, and Problems.) 1. Introduction and Historical Perspective. Introduction. Integrated Circuits and the Planar Process--Key Inventions That Made It All Possible. Semiconductors. Semiconductor Devices. Semiconductor Circuit Families. Modern Scientific Discovery--Experiments, Theory and Computer Simulation. The Plan for This Book. 2. Modern CMOS Technology. CMOS Process Flow. 3. Crystal Growth, Wafer Fabrication and Basic Properties of Silicon Wafers. 4. Semiconductor Manufacturing
• Clean Rooms, Wafer Cleaning and Gettering. 5. Lithography. 6. Thermal Oxidation and the Si/SiO2 Interface. 7. Dopant Diffusion. 8. Ion Implantation. 9. Thin Film Deposition. 10. Etching. 11. Backend Technology.
• (source: Nielsen Book Data)

For one-quarter/semester, senior/graduate level courses in Fabrication Processes. Unique in approach, this text provides an integrated view of silicon technology--with an emphasis on modern computer simulation. It describes not only the manufacturing practice associated with the technologies used in silicon chip fabrication, but also the underlying scientific basis for those technologies.
(source: Nielsen Book Data)